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WILLAS

SE2310 Datasheet Preview

SE2310 Datasheet

SOT-23 Plastic-Encapsulate MOSFETS

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WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
SE2310
N-Channel MOSFET
DESCRIPTION
The SE2310 uses advanced trench technology to provide excellent
RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V.
This device is suitable for use as a battery protection or in other switching
application.
FEATURES
High power and current handing capability
Lead free product is acquired
Surface mount package
APPLICATION
Battery Switch
DC/DC Converter
MARKING: S10
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (note 1)
Power Dissipation
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
RθJA
TJ
TSTG
Moisture Sensitivity Level 1
Value
60
±20
3
10
0.35
357
150
-55~+150
Unit
V
V
A
A
W
/W
2013-10
WILLAS ELECTRONIC CORP.




WILLAS

SE2310 Datasheet Preview

SE2310 Datasheet

SOT-23 Plastic-Encapsulate MOSFETS

No Preview Available !

WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
SE2310
Electrical characteristics (Ta=25unless otherwise noted)
Parameter
Symbol
Test Condition
STATIC CHARACTERISTICS
Drain-source breakdown voltage
V (BR)DSS VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS VDS =60V,VGS = 0V
Gate-body leakage current
IGSS VGS =±20V, VDS = 0V
Gate threshold voltage (note 3)
VGS(th)
VDS =VGS, ID =250µA
Drain-source on-resistance (note 3)
RDS(on)
VGS =10V, ID =3A
VGS =4.5V, ID =3A
Forward tranconductance (note 3)
gFS VDS =15V, ID =2A
Diode forward voltage (note 3)
VSD IS=3A, VGS = 0V
DYNAMIC CHARACTERISTICS (note 4)
Input Capacitance
Ciss
Output Capacitance
Coss VDS =30V,VGS =0V,f =1MHz
Reverse Transfer Capacitance
Crss
SWITCHING CHARACTERISTICS (note 4)
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
VGS=10V,VDD=30V,
ID=1.5A,RGEN=1
Turn-off fall time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS =30V,VGS =4.5V,ID =3A
Gate-Drain Charge
Qgd
Notes :
1. Repetitive rating : Pulse width limited by junction temperature.
2. Surface mounted on FR4 board , t10s.
3. Pulse Test : Pulse Width300µs, Duty Cycle0.5%.
4. Guaranteed by design, not subject to producting.
Min Typ Max Unit
60 V
1 µA
±100 nA
0.5 2 V
105 m
125 m
1.4 S
1.2 V
247 pF
34 pF
19.5 pF
6 ns
15 ns
15 ns
10 ns
6 nC
1 nC
1.3 nC
2013-10
WILLAS ELECTRONIC CORP.


Part Number SE2310
Description SOT-23 Plastic-Encapsulate MOSFETS
Maker WILLAS
Total Page 4 Pages
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