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WINSEMI SEMICONDUCTOR

SBP13007-O Datasheet Preview

SBP13007-O Datasheet

High Voltage Fast-Switching NPN Power Transistor

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SBP13007-O
High Voltage Fast-Switching NPN Power Transistor
Features
Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
General Description
This device is designed for high voltage, High speed
switching characteristics required such as lighting
system ,switching mode power supply.
B
C
E
TO220
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VCEO
VEBO
IC
ICP
IB
IBM
PC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc = 25
Total Dissipation at Ta = 25
TJ Operation Junction Temperature
TSTG
Storage Temperature
Tc: Case temperature (good cooling)
Ta: Ambient temperature (without heat sink)
Test Conditions
VBE = 0
IB = 0
IC = 0
tP = 5ms
Thermal Characteristics
Symbol
Parameter
RθJc Thermal Resistance Junction to Case
RθJA Thermal Resistance Junction to Ambient
Value
700
400
9.0
8.0
16
4.0
8.0
80
2.05
- 40 ~ 150
- 40 ~ 150
Units
V
V
V
A
A
A
A
W
Value
1.56
62.5
Units
/W
/W
Jan 2008. Rev. 0
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T01-3




WINSEMI SEMICONDUCTOR

SBP13007-O Datasheet Preview

SBP13007-O Datasheet

High Voltage Fast-Switching NPN Power Transistor

No Preview Available !

www.DataSheet4U.com
SBP13007-O
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
Value
Units
Min Typ Max
VCEO(sus) Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0
400 -
-V
VCE(sat)
VBE(sat)
ICBO
hFE
ts
tf
ts
tf
ts
tf
Collector-Emitter Saturation Voltage
Ic=2.0A,Ib=0.4A
Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=2.0A
1.0
- - 2.0 V
3.0
Ic=5.0A,Ib=1.0A
Tc=100
- - 2.5 V
Base-Emitter Saturation Voltage
Ic=2.0A,Ib=0.4A
Ic=5.0A,Ib=1.0A
Ic=5.0A,Ib=1.0A
Tc=100
1.2
--
V
1.6
- - 1.5 V
Collector-Base Cutoff Current
(Vbe=-1.5V)
Vcb=700V
Vcb=700V, Tc=100
1.0
--
mA
5.0
DC Current Gain
Resistive Load
Storage Time
Fall Time
Inductive Load
Storage Time
Fall Time
Inductive Load
Storage Time
Fall Time
Vce=5V,Ic=2.0A
Vce=5V, Ic=5.0A
VCC=125V , Ic=5.0A
IB1=1.0A , IB2=-1.0A
Tp=25
10 - 40
5 - 40
-
1.5 3.0
0.17 0.4
VCC=15V ,Ic=5A
IB1=1.0A , IB2=-2.5A
L=0.35mH,Vclamp=300V
- 0.8 2.0
- 0.06 0.12
VCC=15V ,Ic=1A
IB1=0.4A , IB2=-1.0A
L=0.35mH,Vclamp=300V
-
1.0 3.0
Tc=100- 0.07 0.15
Note:
Pulse Test : Pulse width 300, Duty cycle 2%
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
2/5


Part Number SBP13007-O
Description High Voltage Fast-Switching NPN Power Transistor
Maker WINSEMI SEMICONDUCTOR
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SBP13007-O Datasheet PDF





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