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SBP13007-O Datasheet High Voltage Fast-switching NPN Power Transistor

Manufacturer: WINSEMI SEMICONDUCTOR

Overview: .. SBP13007-O High Voltage Fast-Switching NPN Power Transistor.

Datasheet Details

Part number SBP13007-O
Manufacturer WINSEMI SEMICONDUCTOR
File Size 474.08 KB
Description High Voltage Fast-Switching NPN Power Transistor
Datasheet SBP13007-O_WINSEMISEMICONDUCTOR.pdf

General Description

This device is designed for high voltage, High speed switching characteristics required such as lighting system ,switching mode power supply.

C E TO220 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Total Dissipation at Ta = 25℃ Operation Junction Temperature Storage Temperature tP = 5ms Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 8.0 16 4.0 8.0 80 2.05 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W ℃ ℃ Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Thermal Characteristics Symbol RθJc RθJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.56 62.5 Units ℃/W ℃/W Jan 2008.

Rev.

Key Features

  • Very High Switching Speed.
  • High Voltage Capability.
  • Wide Reverse Bias SOA B General.

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