Part SBP13007-O
Description High Voltage Fast-Switching NPN Power Transistor
Category Transistor
Manufacturer WINSEMI SEMICONDUCTOR
Size 474.08 KB
WINSEMI SEMICONDUCTOR

SBP13007-O Overview

Description

This device is designed for high voltage, High speed switching characteristics required such as lighting system ,switching mode power supply. C E TO220 Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Total Dissipation at Ta = 25℃ Operation Junction Temperature Storage Temperature tP = 5ms Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 8.0 16 4.0 8.0 80 2.05 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W ℃ ℃ Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Symbol RθJc RθJA Parameter Jan 2008.

Key Features

  • Very High Switching Speed
  • High Voltage Capability
  • Wide Reverse Bias SOA B