silicon n-channel mosfet.
� � � � � 18A,200V,RDS(on)(Max 0.18Ω)@VGS=10V Ultra-low Gate Charge(Typical 40nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)
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such as automotive, high efficiency switching for DC/DC converters,and DC motor control.
Absolute Maximum Ratings
Symbo.
This Power MOSFET is produced using Winsemi's advanced been planar stripe,DMOS technology. This latest technology has
especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well s.
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