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WINSEMI SEMICONDUCTOR

WFP18N20 Datasheet Preview

WFP18N20 Datasheet

Silicon N-Channel MOSFET

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Features
18A,200V,RDS(on)(Max 0.18Ω)@VGS=10V
Ultra-low Gate Charge(Typical 40nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
WFP18N20
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,DMOS technology. This latest technology has been
especially designed to minimize on -state resistance,have a high
rugged avalanche characteristics. This devices is specially well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters,and DC motor control.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
(Note1)
(Note2)
(Note1)
(Note3)
Value
200
18
12
72
±30
580
13
5
140
0.78
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/
Thermal Characteristics
Symbol
Parameter
RQJC
RACS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance, Case- to -Sink
Thermal Resistance , Junction-to -Ambient
Value
Units
Min Typ Max
- - 0.89 /W
- 0.5 - /W
- - 62.5 /W
Rev.A Sep.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.




WINSEMI SEMICONDUCTOR

WFP18N20 Datasheet Preview

WFP18N20 Datasheet

Silicon N-Channel MOSFET

No Preview Available !

www.DataSheet.in
WFP18N20
Electrical Characteristics(Tc=25)
Characteristics
Symbol Test Condition Min Type Max Unit
Gate leakage current
IGSS VGS=±30V,VDS=0V
- - ±100 nA
Gate-source breakdown voltage
V(BR)GSS IG=±10 µA,VDS=0V
±30 -
-V
Drain cut -off current
IDSS VDS=200V,VGS=0V
- - 1 µA
Drain -source breakdown voltage
V(BR)DSS ID=250 µA,VGS=0V
200 -
-V
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
2 - 4V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=11A
- - 0.18 Ω
Forward Transconductance
gfs VDS=50V,ID=11A
6.7 -
-S
Input capacitance
Reverse transfer capacitance
Output capacitance
Ciss
Crss
Coss
VDS=25V,
VGS=0V,
f=1MHz
- - 1300
- - 430 pF
- - 130
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
tr VDD=100V,
- 14 -
ton ID=18A
tf RG=9.1Ω
- 51 -
ns
- 45 -
toff RD=5.4Ω (Note4,5) - 36 -
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
Qg
Qgs
Qgd
VDD=160V,
VGS=10V,
ID=18A
(Note4,5)
-
-
-
40 70
nC
- 13
- 39
Source-Drain Ratings and Characteristics(Ta=25)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
IDR
- - - 18 A
Pulse drain reverse current
IDRP
- - - 72 A
Forward voltage(diode)
VDSF
IDR=18A,VGS=0V
- 1.4 2.0 V
Reverse recovery time
Reverse recovery charge
trr IDR=18A,VGS=0V,
Qrr dIDR / dt =100 A / µs
- 300 610 ns
- 3.4 7.1 µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=18.5mH IAS=18A,VDD=50V,RG=0Ω ,Starting TJ=25
3.ISD≤18A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
Steady, all for your advance
2/7


Part Number WFP18N20
Description Silicon N-Channel MOSFET
Maker WINSEMI SEMICONDUCTOR
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