WFP18N20 Datasheet | WINSEMI SEMICONDUCTOR

.Data Sheet.in Silicon N-Channel MOSFET Features - - - - - 18A,200V,RDS(on)(Max 0.18Ω)@VGS=10V Ultra-low Gate Charge(Typical 40n C) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced been planar stripe,DMOS technology. This latest technology has especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters,and DC motor...