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WINSEMI SEMICONDUCTOR

WFP2N60B Datasheet Preview

WFP2N60B Datasheet

Silicon N-Channel MOSFET

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WFP2N60B
Silicon N-Channel MOSFET
Features
■ 2A,600V, RDS(on)(Max 4.7Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 9.0nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150)
General Description
This Power MOSFET is produced using Winsemi’s advanced planar
stripe, VDMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch mode power supply.
G
D
S
TO220
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TJ, Tstg
TL
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25)
Derating Factor above 25
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
(Note1)
(Note 2)
(Note 1)
(Note 3)
Value
600
2.0
1.3
8
±30
140
6.4
5.5
54
0.43
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Value
Min Typ Max
- - 2.3
0.5 -
-
- - 62.5
Units
/W
/W
/W
Rev. D Nov.2009
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T02-2




WINSEMI SEMICONDUCTOR

WFP2N60B Datasheet Preview

WFP2N60B Datasheet

Silicon N-Channel MOSFET

No Preview Available !

www.DataSheet.in
WFP2N60B
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
IGSS VGS = ±30 V, VDS = 0 V
Gate−source breakdown voltage V(BR)GSS
IG = ±10 μA, VDS = 0 V
Drain cut−off current
VDS = 600 V, VGS = 0 V
IDSS
VDS = 480 V, Tc = 125°C
Drain−source breakdown voltage V(BR)DSS
ID = 250 μA, VGS = 0 V
Break Voltage Temperature
Coefficient
ΔBVDSS/
ΔTJ
ID=250μA, Referenced to 25
Gate threshold voltage
VGS(th)
VDS = 10 V, ID =250 μA
Drain−source ON resistance
RDS(ON)
VGS = 10 V, ID =1A
Forward Transconductance
gfs
VDS = 50 V, ID =1A
Input capacitance
Ciss VDS = 25 V,
Reverse transfer capacitance
Crss
VGS = 0 V,
Output capacitance
Coss f = 1 MHz
Rise time
tr
VDD =300 V,
Switching time
Turn−on time
Fall time
ton
tf
ID = 2 A
RG=25 Ω
Turn−off time toff
(Note4,5)
Total gate charge (gate−source
plus gate−drain)
Qg
VDD = 320 V,
VGS = 10 V,
Gate−source charge
Qgs ID = 2 A
Gate−drain (“miller”) Charge
Qgd
(Note4,5)
Min
-
±30
-
-
600
-
2
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
0.5
-
4.5
2.25
280
45
4.5
10
25
20
25
9.0
1.7
4.5
Max
±100
-
10
100
-
Unit
nA
V
μA
μA
V
- V/
4V
4.7 Ω
-S
330
55 pF
7
28
55
ns
60
60
12
nC
-
-
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
IDR
IDRP
VDSF
trr
Qrr
-
-
IDR = 2 A, VGS = 0 V
IDR = 2 A, VGS = 0 V,
dIDR / dt = 100 A / μs
Min Type Max Unit
- - 2A
- - 8A
- - 1.4 V
- 180 - ns
-
0.72
-
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=18.5mH,IAS=2.0A,VDD=50V,RG=0Ω,Starting TJ=25
3.ISD≤2.0A,di/dt≤200A/us, VDD<BVDSS,STARTING TJ=25
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
Steady, all for your advance
2/7


Part Number WFP2N60B
Description Silicon N-Channel MOSFET
Maker WINSEMI SEMICONDUCTOR
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WFP2N60B Datasheet PDF






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