WFP2N60B
Description
This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
Key Features
- 2A,600V, RDS(on)(Max 4.7Ω)@VGS=10V
- Ultra-low Gate Charge(Typical 9.0nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)
