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WINSEMI SEMICONDUCTOR

WFP9N20 Datasheet Preview

WFP9N20 Datasheet

Silicon N-Channel MOSFET

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WFP9N20
Silicon N-Channel MOSFET
Features
■ 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 43nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor control.
G
D
S
TO220
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TJ, Tstg
TL
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25)
Derating Factor above 25
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
(Note1)
(Note 2)
(Note 1)
(Note 3)
Value
200
9
5.7
36
±30
160
7.2
5.5
72
0.57
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Value
Min Typ Max
- - 1.74
- 0.5 -
- - 62.5
Units
/W
/W
/W
Rev, C Dec.2009
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T03-1




WINSEMI SEMICONDUCTOR

WFP9N20 Datasheet Preview

WFP9N20 Datasheet

Silicon N-Channel MOSFET

No Preview Available !

www.DataSheet.in
WFP9N20
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min Type Max Unit
Gate leakage current
IGSS VGS = ±30 V, VDS = 0 V
-
Gate−source breakdown voltage V(BR)GSS
Drain cut−off current
IDSS
IG = ±10 μA, VDS = 0 V
VDS = 200 V, VGS = 0 V
±30
-
Drain−source breakdown voltage
Break Voltage Temperature
Coefficient
V(BR)DSS
ΔBVDSS/
ΔTJ
ID = 250 μA, VGS = 0 V
ID=250μA, Referenced to 25
200
-
- ±100 nA
- -V
- 10 μA
- -V
0.2 - V/
Gate threshold voltage
VGS(th)
Drain−source ON resistance
RDS(ON)
Forward Transconductance
gfs
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
tr
Switching time
Turn−on time ton
Fall time
tf
Turn−off time
Total gate charge (gate−source
plus gate−drain)
toff
Qg
Gate−source charge
Qgs
Gate−drain (“miller”) Charge
Qgd
VDS = 10 V, ID =250 μA
VGS = 10 V, ID = 5.4A
VDS = 50 V, ID =5.4A
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD =100 V,
ID = 5.9 A
RG=12 Ω
(Note4,5)
VDD = 160 V,
VGS = 10 V,
ID = 5.9 A
(Note4,5)
2
-
3.8
-
-
-
-
-
-
-
-
-
-
- 4V
- 0.4 Ω
- -S
800 -
240 - pF
76 -
9.4 -
28 -
ns
39 -
20 -
43 -
7 - nC
23 -
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
-
-
IDR = 9 A, VGS = 0 V
IDR = 5.9A, VGS = 0 V,
dIDR / dt = 100 A / μs
Min
-
-
-
-
-
Type
-
-
1.4
170
1.1
Max
9
36
2.0
340
2.2
Unit
A
A
V
ns
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=500uH,IAS=9 A,VDD=50V,RG=0Ω,Starting TJ=25
3.ISD≤9A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
Steady, all for. your advance
2/7


Part Number WFP9N20
Description Silicon N-Channel MOSFET
Maker WINSEMI SEMICONDUCTOR
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