WFP9N20 Datasheet | WINSEMI SEMICONDUCTOR

Features - 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V - Ultra-low Gate Charge(Typical 43n C) - Fast Switching Capability - 100%Avalanche Tested - Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. TO220 Absolute Maximum Ratings Symbol VDSS Drain Source Voltage Parameter Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Maximum lead Temperature for soldering purposes (Note 2) (Note 1) (Note 3) (Note1) Value Units ID IDM VGS EAS EAR dv/dt PD TJ, Tstg TL 9 5.7 36 ±30 160 7.2 5.5 72 0.57 -55~150 300 A A A V m J m J V/ns W W/℃ ℃ ℃ Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient Min - Value Typ - Max 1.74 62.5 Units ℃/W ℃/W ℃/W Rev, C Dec.2009 Copyright@Win Semi Semiconductor Co.,Ltd.,All rights reserved. T03-1 .Data Sheet.in 9N20 WFP FP9N20 °C) Electrical Characteristics (Tc = 25...