WFP9N20 Datasheet PDF - WINSEMI SEMICONDUCTOR Silicon N-Channel MOSFET Specs

WFP9N20 - Silicon N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Features

9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V.
Ultra-low Gate Charge(Typical 43nC).
Fast Switching Capability.
100%Avalanche Tested.
Maximum Junction Temperature Range(150℃) General.

Datasheet Details

Part number	WFP9N20
Manufacturer	WINSEMI SEMICONDUCTOR
File Size	546.13 KB
Description	Silicon N-Channel MOSFET
Datasheet	WFP9N20 Datasheet
Additional preview pages of the WFP9N20 datasheet.

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Full PDF Text Transcription

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www.DataSheet.in 9N20 WFP FP9 Silicon N-Channel MOSFET Features ■ 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 43nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.

Published: Nov 25, 2010 |