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WFY3N02 - 20V N-Channel MOSFET

General Description

This Power MOSFET is produced using Winsemi’s advanced MOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

This devices is specially well suited for Load switching and PA switching.

Key Features

  • 2.8A, 20V, RDS(on)(Max 65mΩ)@VGS=-4.5V.
  • 1.2 V Rated for Low Voltage Gate Drive.
  • SOT-23 Surface Mount for Small Footprint.
  • Single Pulse Avalanche Energy Rated General.

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Datasheet Details

Part number WFY3N02
Manufacturer WINSEMI SEMICONDUCTOR
File Size 326.43 KB
Description 20V N-Channel MOSFET
Datasheet download datasheet WFY3N02 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WFY3N02 20V N−Channel MOSFET Features ■ 2.8A, 20V, RDS(on)(Max 65mΩ)@VGS=-4.5V ■ 1.2 V Rated for Low Voltage Gate Drive ■ SOT-23 Surface Mount for Small Footprint ■ Single Pulse Avalanche Energy Rated General Description This Power MOSFET is produced using Winsemi’s advanced MOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for Load switching and PA switching.