WFY3N02 Key Features
- 2.8A, 20V, RDS(on)(Max 65mΩ)@VGS=-4.5V
- 1.2 V Rated for Low Voltage Gate Drive
- SOT-23 Surface Mount for Small Footprint
- Single Pulse Avalanche Energy Rated
- Part: WFY3N02
- Manufacturer: WINSEMI SEMICONDUCTOR
- Size: 326.43 KB
Related WINSEMI SEMICONDUCTOR Datasheets
| Part Number | Description |
|---|---|
| WFY3P02 | 20V P-Channel MOSFET |
| WFY4101 | Trench Power MOSFET |
WFY3N02 Description
This Power MOSFET is produced using Winsemi’s advanced MOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for Load switching and PA switching.