Datasheet4U Logo Datasheet4U.com

FP1189 - HFET

Description

The FP1189 is a high performance ½-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package.

Features

  • 50.
  • 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz MTTF >100 Years SOT-89 SMT Package Product.

📥 Download Datasheet

Datasheet Details

Part number FP1189
Manufacturer WJ Communications
File Size 563.22 KB
Description HFET
Datasheet download datasheet FP1189 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FP1100 Silicon Surge Suppressor Diodes Ledex
FP1100A Silicon Surge Suppressor Diodes Ledex
FP1105 High current power inductors EATON
FP1107 High current power inductors EATON
FP1110V High current power inductors EATON

Other Datasheets by WJ Communications

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com FP1189 ½-Watt HFET The Communications Edge TM Product Information Product Features • • • • • • • 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz MTTF >100 Years SOT-89 SMT Package Product Description The FP1189 is a high performance ½-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm output IP3 performance and an output power of +27 dBm at 1-dB compression, while providing 20.5 dB gain at 900 MHz. The device conforms to WJ Communications’ long history of producing high reliability and quality components. The FP1189 has an associated MTTF of greater than 100 years at a mounting temperature of 85°C.
Published: |