HFET Datasheet | Specifications & PDF Download

Product Description Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic p

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FP2189 1-Watt HFET The Communications Edge TM Product Information Product Features • 50 – 4000 MHz • +30 dBm P1dB • +43 dBm Output IP3 • High Drain

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Product Description Sirenza Microdevices’ SHF-0289 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount pla

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SHF-0189(Z) 0.05Ghz to 6GHz, 0.5Watt GaAs HFET SHF-0189(Z) 0.05GHz to 6GHz, 0.5WATT GaAs HFET Package: SOT-89 Product Description RFMD’s SHF-0189

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Preliminary Preliminary Product Description Stanford Microdevices’ SHF-0186 is a high performance GaAs Heterostructure FET housed in a low-cost surfa

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FP31QF 2-Watt HFET The Communications Edge TM Product Information Product Features Product Description Functional Diagram • 50 – 4000 MHz • 18 dB

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FP31QF 2-Watt HFET Product Features • 50 – 4000 MHz • 18 dB Gain @ 900 MHz • +34 dBm P1dB • +46 dBm Output IP3 • High Drain Efficiency • Single Volta

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Preliminary Preliminary Product Description Stanford Microdevices’ SHF-0186K is a high performance GaAs Heterostructure FET housed in a low-cost surf

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Product Description Sirenza Microdevices’ SHF-0589 is a high performance AlGaAs/ GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount pl

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SHF-0189(Z) 0.05Ghz to 6GHz, 0.5Watt GaAs HFET SHF-0189(Z) 0.05GHz to 6GHz, 0.5WATT GaAs HFET Package: SOT-89 Product Description RFMD’s SHF-0189

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TGF4112-EPU 12 mm Discrete HFET  4112 • • • • • 0.5 um gate finger length Nominal Pout of 6.0 Watts at 2.3 GHz Nominal PAE of 54.5% at 2.3 GHz No

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T R I Q U I N T S E M I C O N D U C T O R , I N C . TGF4250-EEU 4.8 mm Discr ete HFET q q q q q q PHOTO ENLARGEMENT 4800 µm x

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DC-6.0 GHz 1.0W Packaged HFET April 2010 - Rev 05-Apr-10 Features 46.5 dBm OIP3 @ 5.8 GHz 15.5 dB Gain @ 2 GHz 10.0 dB Gain @ 6 GHz 30.0 dBm P1dB SOT-

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T R I Q U I N T S E M I C O N D U C T O R , I N C . TGF4240-EPU 2.4mm Discrete HFET q q q q q q 2400 m x 0.5 m Nominal Pout o

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Product Description Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount pla

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Product Description Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount pla

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Product Data Sheet December 16, 2002 DC - 10.5 GHz Discrete HFET TGF4250-SCC Key Features and Performance • • • • • • • • • • Nominal Pout of 34 dBm

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Product Data Sheet March 31, 2003 9.6 mm Discrete HFET TGF4260-SCC Key Features and Performance • • • • • • • 9600 µm x 0.5 µm HFET Nominal Pout of

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FP2189 1-Watt HFET Product Features • • • • • • 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/

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TGF2961-SD 1 Watt DC-4 GHz Packaged HFET Key Features • Frequency Range: DC-4 GHz Nominal 900 MHz Application Board Performance: • TOI: 44 dBm • 31 dB

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