HFET Datasheet | Specifications & PDF Download

DC-6.0 GHz 1.0W Packaged HFET April 2010 - Rev 05-Apr-10 Features 46.5 dBm OIP3 @ 5.8 GHz 15.5 dB Gain @ 2 GHz 10.0 dB Gain @ 6 GHz 30.0 dBm P1dB SOT-

(4 views)

Product Data Sheet December 16, 2002 DC - 12 GHz Discrete HFET TGF4230-SCC Key Features and Performance • • • • • • Nominal Pout of 28.5 dBm at 8.5

(3 views)

Product Data Sheet March 31, 2003 9.6 mm Discrete HFET TGF4260-SCC Key Features and Performance • • • • • • • 9600 µm x 0.5 µm HFET Nominal Pout of

(3 views)

Preliminary Preliminary Product Description Stanford Microdevices’ SHF-0186K is a high performance GaAs Heterostructure FET housed in a low-cost surf

(2 views)

Product Description Sirenza Microdevices’ SHF-0589 is a high performance AlGaAs/ GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount pl

(2 views)

TGF4124-EPU 24 mm Discrete HFET  4124 • • • • • 0.5 um gate finger length Nominal Pout of 12 Watts at 2.3 GHz Nominal PAE of 51.5% at 2.3 GHz Nom

(2 views)

FP31QF 2-Watt HFET The Communications Edge TM Product Information Product Features Product Description Functional Diagram • 50 – 4000 MHz • 18 dB

(2 views)

Product Data Sheet December 16, 2002 DC - 10.5 GHz Discrete HFET TGF4250-SCC Key Features and Performance • • • • • • • • • • Nominal Pout of 34 dBm

(2 views)

FP2189 1-Watt HFET Product Features • • • • • • 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/

(2 views)

FP31QF 2-Watt HFET Product Features • 50 – 4000 MHz • 18 dB Gain @ 900 MHz • +34 dBm P1dB • +46 dBm Output IP3 • High Drain Efficiency • Single Volta

(2 views)

Preliminary Preliminary Product Description Stanford Microdevices’ SHF-0186 is a high performance GaAs Heterostructure FET housed in a low-cost surfa

(1 views)

Product Description Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic p

(1 views)

TGF4112-EPU 12 mm Discrete HFET  4112 • • • • • 0.5 um gate finger length Nominal Pout of 6.0 Watts at 2.3 GHz Nominal PAE of 54.5% at 2.3 GHz No

(1 views)

TGF4118-EPU 18 mm Discrete HFET  4118 • • • • • 0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nomi

(1 views)

T R I Q U I N T S E M I C O N D U C T O R , I N C . TGF4230-EEU 1.2mm Discrete HFET q q q q q q PHOTO ENLARGEMENT 1200 µm X 0

(1 views)

T R I Q U I N T S E M I C O N D U C T O R , I N C . TGF4240-EPU 2.4mm Discrete HFET q q q q q q 2400 m x 0.5 m Nominal Pout o

(1 views)

T R I Q U I N T S E M I C O N D U C T O R , I N C . TGF4250-EEU 4.8 mm Discr ete HFET q q q q q q PHOTO ENLARGEMENT 4800 µm x

(1 views)

T R I Q U I N T S E M I C O N D U C T O R , I N C . TGF4260-EPU 9.6mm Discrete HFET q q q q q q 4260 9600 m x 0.5 m Nominal

(1 views)

www.DataSheet4U.com FP1189 ½-Watt HFET The Communications Edge TM Product Information Product Features • • • • • • • 50 – 4000 MHz +27 dBm P1dB +40

(1 views)

Product Description Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount pla

(1 views)