HFET Datasheet | Specifications & PDF Download

Preliminary Preliminary Product Description Stanford Microdevices’ SHF-0186 is a high performance GaAs Heterostructure FET housed in a low-cost surfa

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Preliminary Preliminary Product Description Stanford Microdevices’ SHF-0186K is a high performance GaAs Heterostructure FET housed in a low-cost surf

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TGF4118-EPU 18 mm Discrete HFET  4118 • • • • • 0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nomi

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TGF4124-EPU 24 mm Discrete HFET  4124 • • • • • 0.5 um gate finger length Nominal Pout of 12 Watts at 2.3 GHz Nominal PAE of 51.5% at 2.3 GHz Nom

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T R I Q U I N T S E M I C O N D U C T O R , I N C . TGF4240-EPU 2.4mm Discrete HFET q q q q q q 2400 m x 0.5 m Nominal Pout o

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T R I Q U I N T S E M I C O N D U C T O R , I N C . TGF4260-EPU 9.6mm Discrete HFET q q q q q q 4260 9600 m x 0.5 m Nominal

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Product Data Sheet December 16, 2002 DC - 12 GHz Discrete HFET TGF4230-SCC Key Features and Performance • • • • • • Nominal Pout of 28.5 dBm at 8.5

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TGF2960-SD 0.5 Watt DC-5 GHz Packaged HFET Key Features • Frequency Range: DC-5 GHz Nominal 900 MHz Application Board Performance: • TOI: 40 dBm • 28

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Product Description Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic p

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Product Description Sirenza Microdevices’ SHF-0589 is a high performance AlGaAs/ GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount pl

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TGF4112-EPU 12 mm Discrete HFET  4112 • • • • • 0.5 um gate finger length Nominal Pout of 6.0 Watts at 2.3 GHz Nominal PAE of 54.5% at 2.3 GHz No

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T R I Q U I N T S E M I C O N D U C T O R , I N C . TGF4230-EEU 1.2mm Discrete HFET q q q q q q PHOTO ENLARGEMENT 1200 µm X 0

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Product Description Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount pla

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Product Data Sheet March 31, 2003 2.4 mm Discrete HFET TGF4240-SCC Key Features and Performance • • • • • • • 2400 µm x 0.5 µm HFET Nominal Pout of

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Product Data Sheet December 16, 2002 DC - 10.5 GHz Discrete HFET TGF4250-SCC Key Features and Performance • • • • • • • • • • Nominal Pout of 34 dBm

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Product Data Sheet March 31, 2003 9.6 mm Discrete HFET TGF4260-SCC Key Features and Performance • • • • • • • 9600 µm x 0.5 µm HFET Nominal Pout of

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FP2189 1-Watt HFET Product Features • • • • • • 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/

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TGF2961-SD 1 Watt DC-4 GHz Packaged HFET Key Features • Frequency Range: DC-4 GHz Nominal 900 MHz Application Board Performance: • TOI: 44 dBm • 31 dB

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SHF-0189(Z) 0.05Ghz to 6GHz, 0.5Watt GaAs HFET SHF-0189(Z) 0.05GHz to 6GHz, 0.5WATT GaAs HFET Package: SOT-89 Product Description RFMD’s SHF-0189

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T R I Q U I N T S E M I C O N D U C T O R , I N C . TGF4250-EEU 4.8 mm Discr ete HFET q q q q q q PHOTO ENLARGEMENT 4800 µm x

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