WeEn Semiconductors BYR16W-1200
Ultrafast power diode
FEATURES AND BENEFITS
● Fast switching● Low forward voltage drop
● Low thermal resistance
● Soft recovery characteristic
● Reduces switching losses in associated MOSFET or IGBT
● Planar passivated for voltage ruggedness and reliability 3.
APPLICATIONS
● Switched-Mode Power Supplies● Power factor correction diode
● Uninterrupted Power Supply
● Motor drive and SMPS freewheeling diode 4. Quick reference data Table 1. Quick reference data Symbol Parameter VR IF(AV) reverse voltage average forward current IFSM non-repetitive peak forward current Static characteristics VF forward voltage Dynamic characteristics trr reverse recovery time Conditions DC δ = 0.5 ; Tmb ≤ 98 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3 tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse IF = 16 A; Tj = 25 °C; Fig. 6 IF = 32 A; Tj = 25 °C; Fig. 6 IF = 16 A; Tj = 125 °C; Fig. 6 IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs; Tj = 25 °C; Fig. 7 Min Typ Max Unit - - 1200 V - - 16 A - - 150 A - - 165 A - 2.3 3 V - 2.8 3.9 V - 1.8 2.7 V - 40 - ns WeEn Semiconductors 5.