WG50N65DHJ1 Datasheet, IGBT, WeEn

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WG50N65DHJ1 Features and benefits

* Positive Temperature efficient for Easy Parallel Operating
* High Current Capability
* Low saturation Voltage VCE(Sat) = 1.25 V(Typ.) @ IC = 50 A
* EMI .

WG50N65DHJ1 Application

RoHS halogen-Free 2. Features and benefits
* Positive Temperature efficient for Easy Parallel Operating
* Hi.

WG50N65DHJ1 Description

WG50N65DHJ1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO3PF package to provide extremely low on state voltage, and minimal switching performance. This device is ideal for low switching frequency power conversion.

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