* Positive Temperature efficient for Easy Parallel Operating
* High Current Capability
* Low saturation Voltage VCE(Sat) = 1.25 V(Typ.) @ IC = 50 A
* EMI .
RoHS
halogen-Free
2. Features and benefits
* Positive Temperature efficient for Easy Parallel Operating
* Hi.
WG50N65LDJ1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO3PF package to provide extremely low on state voltage, and minimal switching performance. This device is ideal for low switching frequency power conversion.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 878.17KB)