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ADVANCE INFORMATION
WCMC1616V9X
Features
• 1T Cell, PSRAM Architecture • High speed: 70 ns • Wide Voltage range: — VCC range: 2.7V to 3.3V • Low active power — Typical active current: 2 mA @ f = 1 MHz — Typical active current: 13 mA @ f = fMAX • Low standby power • Automatic power-down when deselected
Functional Description[1]
The WCMC1616V9X is a high-performance CMOS pseudo static RAMs (PSRAM) organized as 1M words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life TM
(MoBL® ) in portable applications such as cellular telephones.
WCMC1616V9X Datasheet
