2SB1386 Overview
I C (A) -10 VCE =2V -5 COLLECTOR CURRENT : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) FIG.1 Grounded Emitter Propagation Characteristics 5k DC CURRENT GAIN.
| Part number | 2SB1386 |
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| Datasheet | 2SB1386 Datasheet PDF (Download) |
| File Size | 169.37 KB |
| Manufacturer | Weitron Technology |
| Description | Epitaxial Planar Transistor |
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I C (A) -10 VCE =2V -5 COLLECTOR CURRENT : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) FIG.1 Grounded Emitter Propagation Characteristics 5k DC CURRENT GAIN.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB1386 | Low Frequency Transistor | Rohm |
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2SB1386 | PNP Silicon Epitaxial Planar Transistor | GME |
| 2SB1386 | PNP GENERAL PURPOSE TRANSISTORS | Power Silicon |