WT4433AM Description
.. WT4433AM Surface Mount P-Channel Enhancement Mode MOSFET P b Lead(Pb)-Free DRAIN CURRENT -6 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE D 1 3 S S G 8 7 D 2 D 6 S D.
WT4433AM Key Features
- Super high dense cell design for low RDS(ON) R DS(ON) <35 mΩ @VGS = -10V R DS(ON) <55 m Ω@VGS = -4.5V -Rugged and Reliab
- 6 -30 -1.7 2.5 50 -55 to 150
- 3.0 +100 -1
- Dynamic (3)
- 920 270 170
- 8.6 35.3 36.9 36.3
- nS nS nS nS
- VGS=2V -VGS=4.5V -VGS=10V -VGS=4V -VGS=3.5V
- ID ,DRAIN CURRENT(A)
- VGS=3V