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WT4433AM Datasheet Preview

WT4433AM Datasheet

Surface Mount P-Channel Enhancement Mode MOSFET

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Surface Mount P-Channel
Enhancement Mode MOSFET
P b Lead(Pb)-Free
Features:
*Super high dense cell design for low RDS(ON)
RDS(ON) <35 m@VGS = -10V
RDS(ON) <55 m@VGS = -4.5V
*Rugged and Reliable
*SO-8 Package
WT4433AM
DRAIN CURRENT
-6 AMPERES
DRAIN SOURCE VOLTAGE
-30 VOLTAGE
1
SO-8
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ =125 C)(1)
Pulsed Drain Current (2)
Drain-Source Diode Forward Current (1)
VDS
VGS
ID
IDM
IS
Power Dissipation (1)
Maximax Junction-to-Ambient
PD
R θJA
Value
-30
±20
-6
-30
-1.7
2.5
50
Operating Junction and Storage
Temperature Range
TJ, Tstg
-55 to 150
Device Marking
WT4433AM=STM4433A
Unite
V
V
A
A
A
W
C/W
C
WEITRON
http://www.weitron.com.tw
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29-Jun-05




Weitron Technology

WT4433AM Datasheet Preview

WT4433AM Datasheet

Surface Mount P-Channel Enhancement Mode MOSFET

No Preview Available !

www.DataSheet4U.com
WT4433AM
Electrical Characteristics (TA =25 C Unless otherwise noted)
Characteristic
Static (2)
Drain-Source Breakdown Voltage
VGS=0V, ID=-250 uA
Gate-Source Threshold Voltage
VDS=VGS, ID=-250 uA
Gate-Source Leakage Current
VDS=0V, VGS=-+20V
Zero Gate Voltage Drain Current
VDS=-24V, VGS=0V
Symbol
V(BR)DSS
VGS (th)
IGSS
IDSS
Min
-30
-1
-
-
Drain-Source On-Resistance
VGS=-10V, ID=-5.8A
VGS=-4.5V, ID=-2.0A
On-State Drain Current
VDS=-5V, VGS=-10V
RDS (on)
ID(on)
-
-
-20
Forward Transconductance
VDS=-15V, ID=-5.8A
Dynamic(3)
Input Capacitance
VDS=-15V, VGS=0V, f=1MHZ
Output Capacitance
VDS=-15V, VGS=0V, f=1MHZ
Reverse Transfer Capacitance
VDS=-15V, VGS=0V, f=1MHZ
gfs -
Ciss -
Coss -
Crss -
Switching (3)
Turn-On Delay Time
VD=-15V, V GEN=-10V, ID=-1A, R GEN=6 Ω
Rise Time
VD=-15V, V GEN=-10V, ID=-1A, R GEN=6 Ω
Turn-Off Time
VD=-15V, V GEN=-10V, ID=-1A, R GEN=6 Ω
Fall Time
VD=-15V, V GEN=-10V, ID=-1A, R GEN=6 Ω
Total Gate Charge
VDS=-15V, VGS=-10V, ID=-5.8A
VDS=-15V, VGS=-4.5V, ID=-5.8A
Gate-Source Charge
VDS=-15V, VGS=-10V, ID=-5.8A
Gate-Drain Charge
VDS=-15V, VGS=-10V, ID=-5.8A
Drain-Source Diode Forward Voltage
VGS=0V, IS=-1.7A
td(on)
tr
td(off )
tf
Qg
Qgs
Qgd
VSD
-
-
-
-
-
-
-
-
-
Note: 1. Surface Mounted on FR4 Board t 10sec.
2. Pulse Test : Pulse Width 300us, Duty Cycle 2%.
3. Guaranteed by Design, not Subject to Production Testing.
WEITRON
http://www.weitron.com.tw
2/6
Typ
-
-1.9
-
-
21
40
-
8.5
920
270
170
8.6
35.3
36.9
36.3
17.5
9.4
2.9
4.8
-0.77
Max
-
-3.0
-+100
-1
35
55
-
-
Unit
V
V
nA
uA
mΩ
A
S
-
- PF
-
- nS
- nS
- nS
- nS
- nc
-
- nc
- nc
-1.2 V
29-Jun-05


Part Number WT4433AM
Description Surface Mount P-Channel Enhancement Mode MOSFET
Maker Weitron Technology
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WT4433AM Datasheet PDF






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