WT7822AM Description
WT7822AM Surface Mount N-Channel Enhancement Mode MOSFET P b Lead(Pb)-Free D 1 3 DRAIN CURRENT 14 AMPERES DRAIN SOURCE VOLTAGE 25 VOLTAGE S S 8 7 D 2 D 6.
WT7822AM Key Features
- Super high dense cell design for low RDS(ON) R DS(ON) <7 mΩ@VGS=10V R DS(ON) <9 mΩ@VGS=4.5V -Rugged and Reliable -SO-8 P
- Dynamic (3)
- 3640 550 420
- 12.3 10.2 23.8 12.1
- nS nS nS nS