PNP/NPN Epitaxial Planar Transistors
P b Lead(Pb)-Free
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-E m itter Voltage
Collector-B as e Voltage
E m itter-B as e Voltage
Collector Current (DC)
Collector Current (P ulse) (1)
B ase Current
Total Device Dis s ipation Tc=2 5° C
TA=2 5° C
J unction Tem perature
S torage, Tem perature
Symbol
VCEO
VCB O
VE B O
IC(DC)
IC (P uls e)
IB (P ulse)
PD
Tj
Ts tg
WTD772
WTD882
TO-252/D-PAK
1. BASE
2. COLLECTOR
3. EMITTER
1 23
PNP/WTD772
-3 0
-4 0
-5 . 0
-3 . 0
-7 . 0
-0 . 6
NPN/WTD882
30
40
5.0
3.0
7.0
0.6
10
1.4
150
-5 5 to +1 5 0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
C
C
Device Marking
WTD772=B 772 , WTD882=D882
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-E m itter B reakdown Voltage (IC= -1 0 / 1 0 m Adc, IB =0 )
Collector-B as e B reakdown Voltage (IC= -1 0 0 / 1 0 0 µAdc, IE =0 )
E m itter-B as e B reakdown Voltage (IE = -1 0 0 / 1 0 0 µAdc, IC=0 )
Collector Cutoff Current (VCE = -3 0 / 3 0 Vdc, I B =0 )
Collector Cutoff Current (VCB = -4 0 / 4 0 Vdc, IE =0 )
E mitter Cutoff Current (VE B = -6 . 0 / 6 . 0 Vdc, I C =0 )
N OT E : 1 . P W 3 5 0 us , duty cycle 2 %
WEITRON
http://www.weitron.com.tw
www.DataSheet.in
Symbol Min Max
V(B R )CE O -3 0 / 3 0
-
V(B R )CB O -4 0 / 4 0
V(B R )E B O -5 . 0 / 5 . 0
-
-
ICE0
- -1 .0 / 1 .0
ICB O
- -1 .0 / 1 .0
IE B O
- -1 .0 / 1 .0
Unit
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
