Datasheet Summary
Surface Mount P-Channel Enhancement Mode POWER MOSFET 3 DRAIN
P b Lead(Pb)-Free
DRAIN CURRENT -20 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE
1 GATE
Features
:
- Super High Dense Cell Design For Low R DS(ON) R DS(ON) <50m Ω @V GS =-10V
- Simple Drive Requirement
- Lower On-resistance
- Fast Switching Characteristic
- TO-252 Package
1. GATE 2.4 DRAIN 3. SOURCE
SOURCE
4 1
D-PAK / (TO-252)
Maximum Ratings(Ta=25 C Unless Otherwise Specified)
Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, (VGS@10V, TC=25˚C) , (VGS@10V, TC=100˚C) Pulsed Drain Current
Symbol VDS VGS ID IDM PD RθJC RθJA TJ,Tstg
Value -30 ±20 -20 -13 -72 31 4.0 110
- 55~+150
Unit...