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WTD9973 - Surface Mount N-Channel Enhancement Mode POWER MOSFET

Features

  • SOURCE 2 4 1 1. GATE 2.4 DRAIN 3. SOURCE 2 3 D-PAK / (TO-252) Maximum Ratings(T =25 C Unless Otherwise Specified) A Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, (VGS@10V, TC=25˚C) , (VGS@10V, TC=100˚C) Pulsed Drain Current 1 Symbol VDS VGS ID IDM PD RθJC RθJA TJ,Tstg Value 60 ±20 14 9 40 27 4.5 110 -55~+150 Unit V A Total Power Dissipation(TC=25˚C) Maximum Thermal Resistace Junction-case Maximum Thermal Resistace Junction-ambient Operating Junction and S.

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Datasheet Details

Part number WTD9973
Manufacturer Weitron Technology
File Size 643.45 KB
Description Surface Mount N-Channel Enhancement Mode POWER MOSFET
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Full PDF Text Transcription

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WTD9973 Surface Mount N-Channel Enhancement Mode POWER MOSFET 3 DRAIN P b Lead(Pb)-Free 1 GATE DRAIN CURRENT 14 AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <80mΩ@V GS =10V *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic *TO-252 Package Features: SOURCE 2 4 1 1. GATE 2.4 DRAIN 3. SOURCE 2 3 D-PAK / (TO-252) Maximum Ratings(T =25 C Unless Otherwise Specified) A Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, (VGS@10V, TC=25˚C) , (VGS@10V, TC=100˚C) Pulsed Drain Current 1 Symbol VDS VGS ID IDM PD RθJC RθJA TJ,Tstg Value 60 ±20 14 9 40 27 4.
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