Datasheet Summary
Surface Mount N-Channel Enhancement Mode POWER MOSFET 3 DRAIN
P b Lead(Pb)-Free
1 GATE
DRAIN CURRENT 14 AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE
- Super High Dense Cell Design For Low R DS(ON) R DS(ON) <80mΩ@V GS =10V
- Simple Drive Requirement
- Lower On-resistance
- Fast Switching Characteristic
- TO-252 Package
Features
:
SOURCE
4 1 1. GATE 2.4 DRAIN 3. SOURCE 2
D-PAK / (TO-252)
Maximum Ratings(T =25 C Unless Otherwise Specified)
Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, (VGS@10V, TC=25˚C) , (VGS@10V, TC=100˚C) Pulsed Drain Current
Symbol VDS VGS ID IDM PD RθJC RθJA TJ,Tstg
Value 60 ±20 14 9 40 27 4.5 110 -55~+150
Unit V
Total...