WTD9575 Overview
WTD9575 Surface Mount P-Channel Enhancement Mode POWER MOSFET 3 P b Lead(Pb)-Free 1 GATE DRAIN DRAIN CURRENT -15 AMPERES DRAIN SOURCE VOLTAGE -60 VOLTAGE Super High Dense Cell Design For Low R DS(ON) R DS(ON) <90m Ω@V GS =-10V Simple Drive Requirement Lower On-resistance Fast Switching Characteristic TO-252 Package.
WTD9575 Key Features
- 55~+150
- 56 159
- V ns nC
- I D ,DRAIN CURRENT (A)
- 10V -6.0V -5.0V -4.5V
- VDS ,DRAIN-TO-SOURCE VOLTAGE(V)