Datasheet Summary
Surface Mount P-Channel Enhancement Mode POWER MOSFET 3
P b Lead(Pb)-Free
1 GATE
DRAIN
DRAIN CURRENT -15 AMPERES DRAIN SOURCE VOLTAGE -60 VOLTAGE
- Super High Dense Cell Design For Low R DS(ON) R DS(ON) <90m Ω@V GS =-10V
- Simple Drive Requirement
- Lower On-resistance
- Fast Switching Characteristic
- TO-252 Package
Features
:
SOURCE
4 1 1. GATE 2.4 DRAIN 3. SOURCE 2
D-PAK / (TO-252)
Maximum Ratings(T =25 C Unless Otherwise Specified)
Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, (VGS@10V, TC=25˚C) , (VGS@10V, TC=100˚C) Pulsed Drain Current
Symbol VDS VGS ID IDM PD RθJC RθJA TJ,Tstg
Value -60 ±25 -15 -9.5 -45 36 3.5 110
- 55~+150
Unit...