The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
WTD9435
Surface Mount P-Channel Enhancement Mode POWER MOSFET 3 DRAIN
P b Lead(Pb)-Free
DRAIN CURRENT -20 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE
1 GATE
Features:
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <50m Ω @V GS =-10V *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic *TO-252 Package
1. GATE 2.4 DRAIN 3. SOURCE
2
SOURCE
4 1
2
3
D-PAK / (TO-252)
Maximum Ratings(Ta=25 C Unless Otherwise Specified)
Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, (VGS@10V, TC=25˚C) , (VGS@10V, TC=100˚C) Pulsed Drain Current
1
Symbol VDS VGS ID IDM PD RθJC RθJA TJ,Tstg
Value -30 ±20 -20 -13 -72 31 4.
WTD9435 Datasheet
