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WTD9575 - Surface Mount P-Channel Enhancement Mode POWER MOSFET

Key Features

  • SOURCE 2 4 1 1. GATE 2.4 DRAIN 3. SOURCE 2 3 D-PAK / (TO-252) Maximum Ratings(T =25 C Unless Otherwise Specified) A Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, (VGS@10V, TC=25˚C) , (VGS@10V, TC=100˚C) Pulsed Drain Current 1 Symbol VDS VGS ID IDM PD RθJC RθJA TJ,Tstg Value -60 ±25 -15 -9.5 -45 36 3.5 110 - 55~+150 Unit V A Total Power Dissipation(TC=25˚C) Maximum Thermal Resistace Junction-case Maximum Thermal Resistace Junction-ambient Operating Junctio.

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Datasheet Details

Part number WTD9575
Manufacturer Weitron Technology
File Size 701.36 KB
Description Surface Mount P-Channel Enhancement Mode POWER MOSFET
Datasheet download datasheet WTD9575 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WTD9575 Surface Mount P-Channel Enhancement Mode POWER MOSFET 3 P b Lead(Pb)-Free 1 GATE DRAIN DRAIN CURRENT -15 AMPERES DRAIN SOURCE VOLTAGE -60 VOLTAGE *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <90m Ω@V GS =-10V *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic *TO-252 Package Features: SOURCE 2 4 1 1. GATE 2.4 DRAIN 3. SOURCE 2 3 D-PAK / (TO-252) Maximum Ratings(T =25 C Unless Otherwise Specified) A Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, (VGS@10V, TC=25˚C) , (VGS@10V, TC=100˚C) Pulsed Drain Current 1 Symbol VDS VGS ID IDM PD RθJC RθJA TJ,Tstg Value -60 ±25 -15 -9.5 -45 36 3.