WTD9575 Datasheet | Weitron Technology

Features : SOURCE 4 1 1. GATE 2.4 DRAIN 3. SOURCE 2 D-PAK / (TO-252) Maximum Ratings(T =25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, (VGS@10V, TC=25˚C) , (VGS@10V, TC=100˚C) Pulsed Drain Current Symbol VDS VGS ID IDM PD RθJC RθJA TJ,Tstg Value -60 ±25 -15 -9.5 -45 36 3.5 110 - 55~+150 Unit V Total Power Dissipation(TC=25˚C) Maximum Thermal Resistace Junction-case Maximum Thermal Resistace Junction-ambient Operating Junction and Storage Temperature Range W ˚C/W ˚C/W ˚C Device Marking WTD9575=9575 http:.weitron..tw .Data Sheet.in WEITRON 1/6 01-Aug-05 Electrical Characteristics (TA = 25℃ Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS=0,ID=-250μA Gate-Source Threshold Voltage VDS=VGS,ID=-250μA Gate-Source Leakage current VGS=±25V Drain-Source Leakage Current(Tj=25˚C) VDS=-60V,VGS=0 Drain-Source Leakage Current(Tj=70˚C) VDS=-48V,VGS=0 Drain-Source On-Resistance VGS=-10V,ID=-12A VGS=-4.5V,ID=-9A Forward Transconductance VDS=-10V,I D=-9A BVDSS VGS(Th) IGSS -60 -1.0 IDSS -25 V -3.0 ±100 -1 μA n A RDS(on) - - 90 120 mΩ gfs - 14 - S Dynamic Input Capacitance VGS=0V,VDS=-25V,f=1.0MHz Output Capacitance VGS=0V,VDS=-25V,f=1.0MHz Reverse Transfer Capacitance VGS=0V,VDS=-25V,f=1.0MHz Ciss Coss Crss 1660 160 100 2660 p F http:.weitron..tw .Data Sheet.in WEITRON 2/6 01-Aug-05 Switching...