WTM1766 Datasheet | Weitron Technology

NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER SOT-89 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Value 40 32 5.0 2.0 500 150 -55-150 Units V V V A m W ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage .. Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO h FE(1) VCE(sat) f T Cob Test IC=50μA, IE=0 IC=1m A, IB=0 IE=50μA, IC=0 VCB=20V, IE=0 VEB=4V, IC=0 conditions MIN 40 32 5 UNIT V V V Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance 1 1 82 390 0.8 100 30 μA μA VCE=3V, IC=500m A IC=2A, IB=0.2A VCE=5V, IC=50m A, f=100MHz VCB=10V, IE=0, f=1MHz V MHz p F CLASSIFICATION OF Rank Range Marking h FE(1) P 82-180 DBP Q 120-270 DBQ R 180-390 DBR WEITRON http://.weitron..tw 1/3 04-Dec-08 Typical Characteristics .. WEITRON http://.weitron..tw 2/3 04-Dec-08 SOT-89 Outline Dimensions unit:mm Dim SOT-89...