W332M72V-XSBX
Description
The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quad-bank DRAM with a synchronous interface.
Key Features
- 208 Plastic Ball Grid Array (PBGA), 16 x 22mm 3.3V ±0.3V power supply for core and I/Os Fully Synchronous; all signals registered on positive edge of system clock cycle Internal pipelined operation; column address can be changed every clock cycle Internal banks for hiding row access/precharge Programmable Burst length 1,2,4,8 or full page 8192 refresh cycles Commercial, Industrial and Military Temperature Ranges Organized as 32M x 72 Weight: W332M72V-XSBX - 2.0 grams typical
