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WED8L24513V - Asynchronous SRAM

Description

The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate.

Features

  • 512Kx24 bit CMOS Static Random Access Memory Array.
  • Fast Access Times: 10, 12, and 15ns Master Output Enable and Write Control TTL Compatible Inputs and Outputs Fully Static, No Clocks 119 Lead BGA (JEDEC MO-163), No. 391 Small Footprint, 14mmx22mm Multiple Ground Pins for Maximum Noise Immunity WED8L24513V.

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Datasheet Details

Part number WED8L24513V
Manufacturer White Electronic Designs
File Size 390.64 KB
Description Asynchronous SRAM
Datasheet download datasheet WED8L24513V Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com White Electronic Designs Asynchronous SRAM, 3.3V, 512Kx24 FEATURES   512Kx24 bit CMOS Static Random Access Memory Array           Fast Access Times: 10, 12, and 15ns Master Output Enable and Write Control TTL Compatible Inputs and Outputs Fully Static, No Clocks 119 Lead BGA (JEDEC MO-163), No. 391 Small Footprint, 14mmx22mm Multiple Ground Pins for Maximum Noise Immunity WED8L24513V DESCRIPTION The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.
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