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WV3EG265M72EFSU-D4 - 1GB - 2x64Mx72 DDR SDRAM

General Description

The WV3EG265M72EFSU is a 2x64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components.

The module consists of eighteen 64Mx8 DDR SDRAMs in FBGA packages mounted on a 200 pin FR4 substrate.

RoHS compliant products Ve

Key Features

  • Unbuffered 200-pin (SO-DIMM), small-outline, dualin-line module Fast data transfer rate: PC-2100, and PC-2700 Clock speeds of 133MHz, and 166MHz Supports ECC error detection and correction VCC = VCCQ = +2.5V ± 0.2V(133 and 166MHz) Bi-directional data strobes (DQS) Differential clock inputs (CK & CK#) Programmable Read Latency: DDR 266 (2, 2.5 clock), DDR333 (2.5 clock) Programmable Burst Length (2, 4, 8) Programmable Burst type (sequential & interleave) Edge aligned data output, center aligned d.

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Datasheet Details

Part number WV3EG265M72EFSU-D4
Manufacturer White Electronic Designs
File Size 209.35 KB
Description 1GB - 2x64Mx72 DDR SDRAM
Datasheet download datasheet WV3EG265M72EFSU-D4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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White Electronic Designs WV3EG265M72EFSU-D4 ADVANCED* 1GB – 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA FEATURES Unbuffered 200-pin (SO-DIMM), small-outline, dualin-line module Fast data transfer rate: PC-2100, and PC-2700 Clock speeds of 133MHz, and 166MHz Supports ECC error detection and correction VCC = VCCQ = +2.5V ± 0.2V(133 and 166MHz) Bi-directional data strobes (DQS) Differential clock inputs (CK & CK#) Programmable Read Latency: DDR 266 (2, 2.5 clock), DDR333 (2.5 clock) Programmable Burst Length (2, 4, 8) Programmable Burst type (sequential & interleave) Edge aligned data output, center aligned data input Auto and self refresh, 7.