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WV3EG64M64ETSU-D3 - 512MB - 64Mx64 DDR SDRAM UNBUFFERED

General Description

The WV3EG64M64ETSU is a 64Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components.

The module consists of eight 64Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184 pin substrate.

Synchronous design allows precise cycle control with the use of system clock.

Key Features

  • Double-data-rate architecture PC2700 @ CL 2.5 Bi-directional data strobes (DQS) Differential clock inputs (CK & CK#) Programmable Read Latency 2,2.5 (clock) Programmable Burst Length (2,4,8) Programmable Burst type (sequential & interleave) Edge aligned data output, center aligned data input. Auto and self refresh, (8K/64ms refresh) Serial presence detect with EEPROM Power supply:.
  • VCC = VCCQ = +2.5V ±0.2V 184 pin DIMM package.
  • D3 PCB height: 28.58mm (1.125") NOTE: Consult fact.

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Datasheet Details

Part number WV3EG64M64ETSU-D3
Manufacturer White Electronic Designs
File Size 273.52 KB
Description 512MB - 64Mx64 DDR SDRAM UNBUFFERED
Datasheet download datasheet WV3EG64M64ETSU-D3 Datasheet

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White Electronic Designs WV3EG64M64ETSU-D3 PRELIMINARY* 512MB – 64Mx64 DDR SDRAM UNBUFFERED FEATURES Double-data-rate architecture PC2700 @ CL 2.5 Bi-directional data strobes (DQS) Differential clock inputs (CK & CK#) Programmable Read Latency 2,2.5 (clock) Programmable Burst Length (2,4,8) Programmable Burst type (sequential & interleave) Edge aligned data output, center aligned data input. Auto and self refresh, (8K/64ms refresh) Serial presence detect with EEPROM Power supply: • VCC = VCCQ = +2.5V ±0.2V 184 pin DIMM package • D3 PCB height: 28.58mm (1.