Datasheet4U.com

WS7931D - CMOS medium band LTE LNA

Product Overview

WillSEMI

📥 Download Datasheet

WS7931D CMOS medium band LTE LNA by WillSEMI - Datasheet Preview — Datasheet preview – WS7931D

Datasheet Details

Part number	WS7931D
Manufacturer	WillSEMI
File Size	605.58 KB
Description	CMOS medium band LTE LNA
Datasheet	WS7931D Datasheet
Additional preview pages of the WS7931D datasheet.

Product details

Description

The WS7931D is a low noise amplifier (LNA) for LTE receiver applications, available in a small 6-pin DFN package.

Features

Operating frequency: 1805 MHz to 2200 MHz.
Noise figure = 1.0 dB.
Gain = 12.1 dB.
Input 1 dB compression point = -3.5 dBm.
In-band input IP3 = +5.0 dBm.
Supply voltage: 1.8 V to 3.1 V.
Integrated supply decoupling capacitor.
Supply current: 5.6 mA.
Power-down mode leakage current < 1μA.
One external matching inductor required.
Output decoupled to ground.
ESD protection: HBM > 2.0kV for all pins.
Integrated output matching.
Pa.

📁 Similar Datasheet

WS7.0P4SMA - Power Transient Voltage Suppressor (WAYON)
WS7.0P4SMA-B - Power Transient Voltage Suppressor (WAYON)
WS7.0P6SMB - Power Transient Voltage Suppressor (WAYON)
WS7.0P6SMB-B - Power Transient Voltage Suppressor (WAYON)
WS7.5P4SMA - Power Transient Voltage Suppressor (WAYON)
WS7.5P4SMA-B - Power Transient Voltage Suppressor (WAYON)
WS7.5P6SMB - Power Transient Voltage Suppressor (WAYON)
WS7.5P6SMB-B - Power Transient Voltage Suppressor (WAYON)

Other Datasheets by WillSEMI

WS7938D - CMOS wide band LTE LNA

Published: Mar 8, 2019 |