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WS7938D - CMOS wide band LTE LNA

Description

The WS7938D is a low noise amplifier (LNA) for LTE receiver applications, available in a small 6-pin DFN package.

The WS7938D requires only one external inductor for input matching.

The WS7938D is designed to achieve low power dissipation and good performance.

Features

  • Operating frequency: 1805MHz to 2200MHz; 2300 MHz to 2690 MHz.
  • Noise figure = 1.0.
  • 1.3 dB.
  • Gain = 11.0.
  • 13.5 dB.
  • Input 1 dB compression point = -5.0 dBm.
  • In-band input IP3 = +4.0 dBm.
  • Supply voltage: 1.8 V to 3.1 V.
  • Integrated supply decoupling capacitor.
  • Supply current: 5.8 mA.
  • Power-down mode leakage current < 1 μA.
  • One external matching inductor required.
  • Output decoupled to ground.
  • ESD protection: HBM > 2.0 kV for.

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Datasheet Details

Part number WS7938D
Manufacturer WillSEMI
File Size 701.49 KB
Description CMOS wide band LTE LNA
Datasheet download datasheet WS7938D Datasheet

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Full PDF Text Transcription

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WS7938D WS7938D http//:www.sh-willsemi.com CMOS wide band LTE LNA Descriptions The WS7938D is a low noise amplifier (LNA) for LTE receiver applications, available in a small 6-pin DFN package. The WS7938D requires only one external inductor for input matching. The WS7938D is designed to achieve low power dissipation and good performance. It is designed and optimized for the LTE medium and high band: 1805MHz to 2200MHz; 2300MHz to 2690MHz. DFN1107-6L (Bottom view) Features  Operating frequency: 1805MHz to 2200MHz; 2300 MHz to 2690 MHz  Noise figure = 1.0 – 1.3 dB  Gain = 11.0 – 13.5 dB  Input 1 dB compression point = -5.0 dBm  In-band input IP3 = +4.0 dBm  Supply voltage: 1.8 V to 3.1 V  Integrated supply decoupling capacitor  Supply current: 5.
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