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WS7931D - CMOS medium band LTE LNA

Description

The WS7931D is a low noise amplifier (LNA) for LTE receiver applications, available in a small 6-pin DFN package.

The WS7931D requires only one external inductor for input matching.

The WS7931D is designed to achieve low power dissipation and good performance.

Features

  • Operating frequency: 1805 MHz to 2200 MHz.
  • Noise figure = 1.0 dB.
  • Gain = 12.1 dB.
  • Input 1 dB compression point = -3.5 dBm.
  • In-band input IP3 = +5.0 dBm.
  • Supply voltage: 1.8 V to 3.1 V.
  • Integrated supply decoupling capacitor.
  • Supply current: 5.6 mA.
  • Power-down mode leakage current < 1μA.
  • One external matching inductor required.
  • Output decoupled to ground.
  • ESD protection: HBM > 2.0kV for all pins.
  • Integrated output matching.
  • Pa.

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Datasheet Details

Part number WS7931D
Manufacturer WillSEMI
File Size 605.58 KB
Description CMOS medium band LTE LNA
Datasheet download datasheet WS7931D Datasheet

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Full PDF Text Transcription

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WS7931D WS7931D http//:www.sh-willsemi.com CMOS medium band LTE LNA Descriptions The WS7931D is a low noise amplifier (LNA) for LTE receiver applications, available in a small 6-pin DFN package. The WS7931D requires only one external inductor for input matching. The WS7931D is designed to achieve low power dissipation and good performance. It is designed and optimized for the LTE medium band: 1805MHz to 2200MHz. DFN1107-6L (Bottom view) Features  Operating frequency: 1805 MHz to 2200 MHz  Noise figure = 1.0 dB  Gain = 12.1 dB  Input 1 dB compression point = -3.5 dBm  In-band input IP3 = +5.0 dBm  Supply voltage: 1.8 V to 3.1 V  Integrated supply decoupling capacitor  Supply current: 5.
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