WSB5543W - Schottky Barrier Diode

WillSEMI

Key Features

1.0A Average rectified forward current.
Trench MOS Schottky technology.
Low forward voltage,low leakage current.
Small package SOD-323F.

WSB5543W schottky barrier diode by WillSEMI - Datasheet Preview

Datasheet Details

Part number	WSB5543W
Manufacturer	WillSEMI
File Size	242.02 KB
Description	Schottky Barrier Diode
Datasheet	WSB5543W Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
WSB5503W	Middle Power Schottky Barrier Diode	Will Semiconductor
WSB06200AT	High Voltage Power Schottky Rectifier	Weitron
WSB1151	PNP EPITAXIAL SILICON TRANSISTOR	Wooseok
WSB6.8D	Transient Voltage Suppressors	Weitron
WSB6.8S	Transient Voltage Suppressors	Weitron

Other Datasheets by WillSEMI

Part Number	Description
WSB5546N	Schottky Barrier Diode
WSB5549N	Schottky Barrier Diode
WSB5507W	Schottky Barrier Diode
WSB5508L	Schottky Barrier Diode
WSB5510M	Schottky Barrier Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

WSB5543W Middle Power Schottky Barrier Diode Features  1.0A Average rectified forward current  Trench MOS Schottky technology  Low forward voltage,low leakage current  Small package SOD-323F Applications  Switching circuit  Middle current rectification Absolute maximum ratings Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(1) Forward peak surge current(2) Junction temperature Operating temperature Storage temperature WSB5543W Http://www.sh-willsemi.com SOD-323F Circuit Symbol VRM VR IO IFSM TJ Topr Tstg Marking Value 40 40 1.