WSB5546N - Schottky Barrier Diode

WillSEMI

Key Features

Low reverse current.
0.2A Average rectified forward current.
Standard products are Pb-free and Halogen-free WSB5546N Http://www. sh-willsemi. com DFN1006-2L Circuit Absolute maximum ratings Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Peak forward current (1) Junction temperature Operating temperature Storage temperature Symbol VRM VR IO IFSM TJ Topr Tstg Marking Value 40 40 0.2 3 150 -40 ~ 150 -55 ~ 150 Unit V V A A OC OC.

WSB5546N schottky barrier diode by WillSEMI - Datasheet Preview

Datasheet Details

Part number	WSB5546N
Manufacturer	WillSEMI
File Size	339.83 KB
Description	Schottky Barrier Diode
Datasheet	WSB5546N Datasheet

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Full PDF Text Transcription (Reference)

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WSB5546N 0.2A, Schottky Barrier Diode Features  Low reverse current  0.2A Average rectified forward current  Standard products are Pb-free and Halogen-free WSB5546N Http://www.sh-willsemi.com DFN1006-2L Circuit Absolute maximum ratings Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Peak forward current (1) Junction temperature Operating temperature Storage temperature Symbol VRM VR IO IFSM TJ Topr Tstg Marking Value 40 40 0.2 3 150 -40 ~ 150 -55 ~ 150 Unit V V A A OC OC OC Electronics characteristics (TA=25oC) Parameter Symbol Condition Forward voltage (2) Reverse current Junction capacitance Thermal resistance VF IR CJ Rθ(j-a) IF=0.2A VR=10V VR=40V VR=4V, F=1MHz Junction to ambient Min.