WSB5546N
WSB5546N is Schottky Barrier Diode manufactured by WillSEMI.
Features
- Low reverse current
- 0.2A Average rectified forward current
- Standard products are Pb-free and Halogen-free
Http://.sh-willsemi.
DFN1006-2L Circuit
Absolute maximum ratings
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Peak forward current (1) Junction temperature Operating temperature Storage temperature
Symbol VRM VR IO IFSM TJ Topr Tstg
Marking
Value 40 40 0.2 3 150
-40 ~ 150 -55 ~ 150
Unit V V A A OC OC OC
Electronics characteristics (TA=25o C)
Parameter
Symbol
Condition
Forward voltage (2)
Reverse current
Junction capacitance Thermal resistance
CJ Rθ(j-a)
IF=0.2A VR=10V VR=40V VR=4V, F=1MHz Junction to ambient
Min.
- Order Informations
Device WSB5546N-2/TR
Package DFN1006-2L
Marking M- (3)
Typ. 0.51
- Max. 0.60 0.5
1 500
Unit V u A u A p F
K/W
Shipping 10000/Reel&Tape
Note 1: Pulse Width=8.3ms, Single half-sine Pulse; Note 2:...
