WSB5549N
WSB5549N is Schottky Barrier Diode manufactured by WillSEMI.
Features
- High switching speed
- Low leakage current
- Small package DFN1006-3L
Applications
- High-speed switching
- General-purpose switching
Absolute maximum ratings
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Peak forward surge current Junction temperature Operating temperature Storage temperature
Http://.willsemi.
DFN1006-3L(Bottom View)
Circuit
Symbol VRM VR IO IFSM TJ Topr Tstg
Marking
Value 100 100 150 1(1) 150 -65 ~ 150 -65 ~ 150
Unit V V m A A OC OC OC
Electronics characteristics (TA=25o C)
Parameter Reverse Voltage Per diode
Forward Voltage Per diode
Reverse current Per diode Junction capacitance Thermal Resistance
Symbol VR
IR CJ Rθ(JA)
Condition IR=100u A IF=1m A IF=10m A IF=50m A IF=150m A VR=25V VR=70V VR=100V VR=5V, F=1MHz Junction to Ambient
Min. 100
Typ. 3.4
Max.
0.5 0.6 0.8 1.2 50 0.5 1
Unit V V V V V n A u A u A p F
K/W
Will Semiconductor...
