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WSB5543W - Schottky Barrier Diode

Datasheet Summary

Features

  • 1.0A Average rectified forward current.
  • Trench MOS Schottky technology.
  • Low forward voltage,low leakage current.
  • Small package SOD-323F.

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Datasheet Details

Part number WSB5543W
Manufacturer WillSEMI
File Size 242.02 KB
Description Schottky Barrier Diode
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WSB5543W Middle Power Schottky Barrier Diode Features  1.0A Average rectified forward current  Trench MOS Schottky technology  Low forward voltage,low leakage current  Small package SOD-323F Applications  Switching circuit  Middle current rectification Absolute maximum ratings Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(1) Forward peak surge current(2) Junction temperature Operating temperature Storage temperature WSB5543W Http://www.sh-willsemi.com SOD-323F Circuit Symbol VRM VR IO IFSM TJ Topr Tstg Marking Value 40 40 1.
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