WSB5543W
WSB5543W is Schottky Barrier Diode manufactured by WillSEMI.
Features
- 1.0A Average rectified forward current
- Trench MOS Schottky technology
- Low forward voltage,low leakage current
- Small package SOD-323F
Applications
- Switching circuit
- Middle current rectification
Absolute maximum ratings
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(1) Forward peak surge current(2) Junction temperature Operating temperature Storage temperature
Http://.sh-willsemi.
SOD-323F
Circuit
Symbol VRM VR IO IFSM TJ Topr Tstg
Marking
Value 40 40 1.0 7
-55 ~ 150 -55 ~ 150 -55 ~ 150
Unit V V A A OC OC OC
Electronics characteristics (TA=25o C)
Parameter
Symbol
Condition
Forward voltage(3) Reverse current Junction capacitance Thermal resistance(4)
VF IR CJ RθJSP
IF=1.0A VR=VR VR=1V, F=1MHz Junction to Soldering point
Min.
- Typ. 0.48
8 80
- Max. 0.57 50
Unit V u A p F
K/W
Order Informations
Device
Package
WSB5543W-2/TR...
