WNMD2167 Dual N-Channel MOSFET

Will Semiconductor

Description

WNMD2167 Dual N-Channel, 20V, 6.3A, Power MOSFET VDS (V) 20 Typical Rds(on) (Ω) 0.016@ VGS=4.5V 0.018@ VGS=3.1V 0.020@ VGS=2.5V .
The WNMD2167 is N-Channel enhancement MOS Field Effect Transistor.

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Datasheet Specifications

Part number: WNMD2167
Manufacturer: Will Semiconductor
File Size: 617.65 KB
Datasheet: WNMD2167-WillSemiconductor.pdf
Description: Dual N-Channel MOSFET

Features

* Trench Technology
* Supper high density cell design
* Excellent ON resistance for higher DC current
* Extremely Low Threshold Voltage

Applications

* Driver for Relay, Solenoid, Motor, LED etc.
* DC-DC converter circuit
* Power Switch
* Load Switch
* Charging Pin configuration (Top view) 6 54 2167 YYWW 1 23 2167 = YY = WW = Device Code Year Week Marking Order information Device Package Shipping WNMD2167-6/TR SOT-2

WNMD2167 Distributors

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WNMD2167 Dual N-Channel MOSFET Will Semiconductor

Will Semiconductor WNMD2167-like datasheet