WNMD2167 Key Features
- Trench Technology
- Supper high density cell design
- Excellent ON resistance for higher DC current
- Extremely Low Threshold Voltage
- Small package SOT-23-6L
- Part: WNMD2167
- Manufacturer: Will Semiconductor
- Size: 617.65 KB
Related Will Semiconductor Datasheets
| Part Number | Description |
|---|---|
| WNMD2160 | Dual N-Channel MOSFET |
| WNMD2162 | Dual N-Channel MOSFET |
| WNMD2162A | Dual N-Channel MOSFET |
| WNMD2165 | Dual N-Channel MOSFET |
| WNMD2166 | Dual N-Channel MOSFET |
WNMD2167 Description
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2167 is Pb-free.
WNMD2167 Applications
- Driver for Relay, Solenoid, Motor, LED etc