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WNMD2179 Dual N-Channel MOSFET

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Description

WNMD2179 WNMD2179 Dual N-Channel, 20V, 6.3A, Power MOSFET www.sh-willsemi.com VDS (V) Rds(on) (ȍ) 0.0175@ VGS=4.5V 0.0195@ VGS=3.1V 20 0.0215@ .
The WNMD2179 is N-Channel enhancement MOS Field Effect Transistor.

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Datasheet Specifications

Part number
WNMD2179
Manufacturer
Will Semiconductor
File Size
1.39 MB
Datasheet
WNMD2179-WillSemiconductor.pdf
Description
Dual N-Channel MOSFET

Features

* TSOT-23-6L G1 D1/D2 G2 654 1 23 S1 D1/D2 S2 Pin configuration (Top view) 6 54
* Trench Technology
* Supper high density cell design
* Excellent ON resistance for higher DC current
* Extremely Low Threshold Voltage

Applications

* Driver for Relay, Solenoid, Motor, LED etc.
* DC-DC converter circuit
* Power Switch
* Load Switch
* Charging 2179 NDYW 123 2179 ND Y W = Device Code = Special Code = Year =Week(A~z) Marking Order information Device WNM

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