WNMD2174 - Dual N-Channel MOSFET

Will Semiconductor

General Description

The WNMD2174 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOSFET1 and the MOSFET2 are internally connected.

Key Features

Trench Technology.
Supper high density cell design.
Excellent ON resistance for higher DC current.
Extremely Low Threshold Voltage.
Small package CSP 4L.

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WNMD2174 dual n-channel mosfet by Will Semiconductor - Datasheet Preview

Datasheet Details

Part number	WNMD2174
Manufacturer	Will Semiconductor
File Size	1.55 MB
Description	Dual N-Channel MOSFET
Datasheet	WNMD2174 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNMD2174 Dual N-Channel, 12V, 6A, Power MOSFET Vsss (V) Typ Rss(on) (mΩ) 19@ VGS=4.5V 20@ VGS=4.0V 12 22@ VGS=3.1V 25@ VGS=2.5V ESD Rating:2000V HBM Descriptions The WNMD2174 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOSFET1 and the MOSFET2 are internally connected. Uses advanced trench technology and design to provide excellent RSS(ON) with low gate charge. This device is designed for Lithium-Ion battery protection circuit. The WNMD2174 is available in CSP 4L package. Standard Product WNMD2174 is Pb-free and Halogen-free. WNMD2174 www.sh-willsemi.