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WNMD2179 - Dual N-Channel MOSFET

General Description

The WNMD2179 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

  • TSOT-23-6L G1 D1/D2 G2 654 1 23 S1 D1/D2 S2 Pin configuration (Top view) 6 54.
  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • Small package TSOT-23-6L.

📥 Download Datasheet

Datasheet Details

Part number WNMD2179
Manufacturer Will Semiconductor
File Size 1.39 MB
Description Dual N-Channel MOSFET
Datasheet download datasheet WNMD2179 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNMD2179 WNMD2179 Dual N-Channel, 20V, 6.3A, Power MOSFET www.sh-willsemi.com VDS (V) Rds(on) (ȍ) 0.0175@ VGS=4.5V 0.0195@ VGS=3.1V 20 0.0215@ VGS=2.5V ESD Rating: 2000V HBM Descriptions The WNMD2179 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2179 is Pb-free. Features TSOT-23-6L G1 D1/D2 G2 654 1 23 S1 D1/D2 S2 Pin configuration (Top view) 6 54  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package TSOT-23-6L Applications  Driver for Relay, Solenoid, Motor, LED etc.