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WNMD2171 - Dual N-Channel MOSFET

General Description

The WNMD2171 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOSFET1 and the MOSFET2 are internally connected.

Key Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • Small package CSP 4L WNMD2171 www. sh-willsemi. com MOSFET1 Gate 1 MOSFET2 Gate 2 Gate Protection Diode Source 1 Body Diode CSP 4L Source 2 43 71 YW 12 1: Source 1 2: Gate 1 3: Gate 2 4:.

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Datasheet Details

Part number WNMD2171
Manufacturer Will Semiconductor
File Size 1.93 MB
Description Dual N-Channel MOSFET
Datasheet download datasheet WNMD2171 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNMD2171 Dual N-Channel, 20V, 6A, Power MOSFET Vsss (V) Typ Rss(on) (mΩ) 36@ VGS=4.5V 38@ VGS=4.0V 20 41@ VGS=3.1V 43@ VGS=2.5V ESD Rating:2000V HBM Descriptions The WNMD2171 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOSFET1 and the MOSFET2 are internally connected. Uses advanced trench technology and design to provide excellent RSS(ON) with low gate charge. This device is designed for Lithium-Ion battery protection circuit. The WNMD2171 is available in CSP-4L package. Standard Product WNMD2171 is Pb-free and Halogen-free.