W29N08GZ Description
The W29N08GW/Z (8G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as, voice, video, text and photos. The device operates on a single 1.7V to 1.95V power supply with active current consumption as low as 13mA at 1.8V and 20uA for CMOS standby current.
W29N08GZ Key Features
- Basic Features
- Density : 8Gbit (2 chip stacked solution)
- Vcc : 1.7V to 1.95V
- Bus width : x8/x16
- Operating temperature
- Industrial: -40°C to 85°C
- Single-Level Cell (SLC) technology
- Organization
- Density: 8G-bit/1G-byte
- Page size