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W981216AH Datasheet Preview

W981216AH Datasheet

2M x 16 bit x 4 Banks SDRAM

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W981216AH
Features
3.3V±0.3V power supply
Up to 133 MHz clock frequency
2,097,152 words x 4 banks x 16 bits organization
Auto Refresh and Self Refresh
CAS latency: 2 and 3
Burst Length: 1, 2, 4, 8 , and full page
Burst read, Single Writes Mode
Byte data controlled by UDQM and LDQM
Power-Down Mode
Auto-Precharge and controlled precharge
4k refresh cycles / 64ms
Interface: LVTTL
Package: TSOP II 54 pin, 400 mil - 0.80
2M x 16 bit x 4 Banks SDRAM
General Description
W981216AH is a high speed synchronous dynamic random access memory (SDRAM) , organized as 2M words x 4 banks x
16 bits. Using pipelined architecture and 0.20um process technology, W981216AH delivers a data bandwidth of up to 266M
bytes per second (-75). To fully comply to the personal computer industrial standard, W981216AH is sorted into two speed
grades: -75 and -8H. The -75 is compliant to the PC133/CL3 specification, the –8H is compliant to PC100/CL2 specification.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of
1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated
by the SDRAM internal counrter in burst operation. Random column read is also possible by providing its address at each clock
cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst legnth, latency cycle, interleave or sequential burst
to maximize its performance. W981216AH is ideal for main memory in high performance applications.
Key Parameters
Symbol
Description
tCK Clock Cycle Time
tAC Access Time from CLK
tRP Precharge to Active Command
tRCD Active to Read/Write Command
ICC1 Operation Current ( Single bank )
ICC4 Burst Operation Current
ICC6 Self-Refresh Current
min/max
min
max
min
min
max
max
max
-75 (PC133)
7.5ns
5.4ns
20ns
20ns
85mA
120mA
2mA
-8H (PC100)
8ns
6ns
20ns
20ns
80mA
110mA
2mA
Revision 1.0
Publication Release Date: March, 1999
-1-




Winbond

W981216AH Datasheet Preview

W981216AH Datasheet

2M x 16 bit x 4 Banks SDRAM

No Preview Available !

BLOCK DIAGRAM
CLK
CKE
CLOCK
BUFFER
CS
RAS
CAS
WE
COMMAND
DECODER
CONTROL
SIGNAL
GENERATOR
A10
MODE
A0 REGISTER
ADDRESS
BUFFER
A9
A11
BS0
BS1
REFRESH
COUNTER
COLUMN
COUNTER
W981216AH
2M x 16 bit x 4 Banks SDRAM
COLUMN DECODER
CELL ARRAY
BANK #0
SENSE AMPLIFIER
DATA CONTROL
CIRCUIT
COLUMN DECODER
CELL ARRAY
BANK #2
SENSE AMPLIFIER
COLUMN DECODER
CELL ARRAY
BANK #1
SENSE AMPLIFIER
DMn
DQ
BUFFER
COLUMN DECODER
CELL ARRAY
BANK #3
SENSE AMPLIFIER
DQ0
DQ15
UDQM
LDQM
NOTE:
The cell array configuration is 4096 * 512 * 16.
Revision 1.0
Publication Release Date: March, 1999
-2-


Part Number W981216AH
Description 2M x 16 bit x 4 Banks SDRAM
Maker Winbond
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