PFD6N40EG - N-Channel MOSFET

Features

Originative New Design.
100% EAS Test.
Rugged Gate Oxide Technology.
Extremely Low Intrinsic Capacitances.
Remarkable Switching Characteristics.
Unequalled Gate Charge : 10.5 nC (Typ. ).
Extended Safe Operating Area.
Lower RDS(ON) : 0.7 Ω (Typ. ) @VGS=10V.

PFD6N40EG n-channel mosfet by Wing On - Datasheet Preview

Datasheet Details

Part number	PFD6N40EG
Manufacturer	Wing On
File Size	1.07 MB
Description	N-Channel MOSFET
Datasheet	PFD6N40EG Datasheet

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Full PDF Text Transcription

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PFU6N40EG / PFD6N40EG Green Package FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 10.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.7 Ω (Typ.) @VGS=10V APPLICATION  Electronic lamp ballasts based on half bridge topology  PFC (Power Factor Correction)  SMPS (Switched Mode Power Supplies) PFU6N40EG/PFD6N40EG 400V N-Channel MOSFET BVDSS = 400 V RDS(ON) = 0.7 Ω ID = 4.

Published: Oct 5, 2018 |