• Part: PFD65R900G
  • Description: N-Channel Super Junction MOSFET
  • Category: MOSFET
  • Manufacturer: Wing On
  • Size: 1.35 MB
Download PFD65R900G Datasheet PDF
Wing On
PFD65R900G
PFD65R900G is N-Channel Super Junction MOSFET manufactured by Wing On.
FEATURES  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested  Halogen Free APPLICATION  Power Factor Correction(PFC)  Switched mode power supply (SMPS)  Uninterruptible Power Supply (UPS) BVDSS = 650 V RDS(on) = 0.78Ω ID = 5.0 A I-PAK(TO-251) Drain  Gate  - ◀▲ - -  Source D-PAK(TO-252) Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value IDM(pulse) VGS Drain-Source Voltage (VGS=0V) Drain Current - Continuous (TC = 25℃) Drain Current - Continuous (TC = 100℃) Drain Current - Pulsed - Note 1 Gate-Source Voltage (VDS=0V) 6 50 5.0 3.0 15 ±30 Single Pulsed Avalanche Energy - Note 2 IAR Avalanche Current - Note 1 EAR...