PFD65R900G
PFD65R900G is N-Channel Super Junction MOSFET manufactured by Wing On.
FEATURES
New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested Halogen Free
APPLICATION
Power Factor Correction(PFC) Switched mode power supply (SMPS) Uninterruptible Power Supply (UPS)
BVDSS = 650 V RDS(on) = 0.78Ω ID = 5.0 A
I-PAK(TO-251)
Drain
Gate
- ◀▲
- -
Source
D-PAK(TO-252)
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
IDM(pulse) VGS
Drain-Source Voltage (VGS=0V)
Drain Current
- Continuous (TC = 25℃)
Drain Current
- Continuous (TC = 100℃)
Drain Current
- Pulsed
- Note 1
Gate-Source Voltage (VDS=0V)
6 50 5.0 3.0 15 ±30
Single Pulsed Avalanche Energy
- Note 2
IAR Avalanche Current
- Note 1
EAR...