PFD6N40EG
PFD6N40EG is N-Channel MOSFET manufactured by Wing On.
FEATURES
- Originative New Design
- 100% EAS Test
- Rugged Gate Oxide Technology
- Extremely Low Intrinsic Capacitances
- Remarkable Switching Characteristics
- Unequalled Gate Charge : 10.5 n C (Typ.)
- Extended Safe Operating Area
- Lower RDS(ON) : 0.7 Ω (Typ.) @VGS=10V
APPLICATION
- Electronic lamp ballasts based on half bridge topology
- PFC (Power Factor Correction)
- SMPS (Switched Mode Power Supplies)
PFU6N40EG/PFD6N40EG
400V N-Channel MOSFET
BVDSS = 400 V RDS(ON) = 0.7 Ω ID = 4.8 A
I-PAK(TO-251)
Drain
Gate
- ◀▲
- -
Source
D-PAK(TO-252)
Absolute Maximum Ratings TC=25o C unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS
Drain-Source Voltage
Drain Current Drain Current Drain Current
- Continuous (TC = 25o C)
- Continuous (TC = 100o C)
- Pulsed
(Note 1)
Gate-Source Voltage
400 4.8 3.1 19.3...
