New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested RoHS compliant
BVDSS = 650 V RDS(on) = 0.22 Ω ID = 15 A.
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PFP65T260 / PFF65T260
PFP65T260/PFF65T260
N-Channel Super Junction MOSFET
FEATURES
New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested RoHS compliant
BVDSS = 650 V RDS(on) = 0.