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PFJ60R180 - N-Channel Super Junction MOSFET

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Features

  •  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested  RoHS BVDSS = 600 V RDS(on) = 0.15 Ω ID = 21 A Drain  Gate .
  • ◀▲.
  •  Source TO-247 TO-3P.

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Datasheet Details

Part number PFJ60R180
Manufacturer Wing On
File Size 2.59 MB
Description N-Channel Super Junction MOSFET
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PFJ60R180 / PFW60R180 PFJ60R180 / PFW60R180 N-Channel Super Junction MOSFET FEATURES  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested  RoHS BVDSS = 600 V RDS(on) = 0.15 Ω ID = 21 A Drain  Gate  ● ◀▲ ● ●  Source TO-247 TO-3P APPLICATION  Power Factor Correction(PFC)  Switched mode power supply (SMPS)  Uninterruptible Power Supply (UPS) 1 2 3 1.Gate 2. Drain 3. Source 1 2 3 1.Gate 2. Drain 3.
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