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PFP10N40 - N-Channel MOSFET

Features

  •  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 23 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 0.44 Ω (Typ. ) @VGS=10V.

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Datasheet Details

Part number PFP10N40
Manufacturer Wing On
File Size 1.22 MB
Description N-Channel MOSFET
Datasheet download datasheet PFP10N40 Datasheet

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Full PDF Text Transcription

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Sep 2008 PFP10N40 / PFF10N40 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 23 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.44 Ω (Typ.) @VGS=10V APPLICATION  Electronic lamp ballasts based on half bridge topology  PFC (Power Factor Correction)  SMPS (Switched Mode Power Supplies) PFP10N40 / PFF10N40 400V N-Channel MOSFET BVDSS = 400 V RDS(on) = 0.55 Ω ID = 10 A TO-220 Drain  Gate  ● ◀▲ ● ●  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3.
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