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PFW10N80 - N-Channel MOSFET

Features

  •  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 55 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 0.92 Ω (Typ. ) @VGS=10V.

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Datasheet Details

Part number PFW10N80
Manufacturer Wing On
File Size 1.05 MB
Description N-Channel MOSFET
Datasheet download datasheet PFW10N80 Datasheet

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Full PDF Text Transcription

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May 2007 PFJ10N80 / PFW10N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 55 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.92 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFJ10N80/PFW10N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) = 1.15 Ω ID = 10 A TO-247 Drain  Gate  ● ◀▲ ● ●  Source TO-3P 1 2 3 1.Gate 2. Drain 3. Source 1 2 3 1.Gate 2. Drain 3.
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