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2SA940
PNP EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT
TO-220
! Complementary to 2SC2073
ABSOLUTE MAXIMUM RATING (Ta=25°c)
Characteristic
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC PC Tj Tstg
Rating
-150 -150 -5 -1.5 25 150 -50~150
Unit
V V V A W °C °C
ELECTRICAL CHARACTERISTICS (Ta=25°c)
Characterristic
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Collector- Emitter Saturation Voltage Current Gain Bandwidth Product
Symbol
Test Condition
ICBO IEBO hFE
VCE(sat) fT
VCB= -120V , IE=0 VEB= -5V, IC=0 VCE= -10V, IC=-0.5A IC=-0.5 , IB=-50mA VCE= -10V, IC=-0.5A
Min 40
Typ 4
Max
-10 10 75
-1.
A940 Datasheet
