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A940 Datasheet PNP Power Transistor

Manufacturer: Inchange Semiconductor

Overview: INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product.

General Description

·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 40-140@ IC= -0.5A ·plement to Type 2SC2073 APPLICATIONS ·Designed for use in general purpose power amplifier , vertical output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak Total Power Dissipation PC @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -150 V -150 V -5 V -1.5 A -3.0 A 25 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 5.0 UNIT ℃/W isc Website:.iscsemi.cn Free Datasheet http://../ INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA940 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA ;

A940 Distributor