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SFTN1165R
N-Channel Enhancement Mode MOSFET
Drain Gate
Source
1.Gate 2.Drain 3.Source TO-252 Plastic Package
Absolute Maximum Ratings Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Drain Current Power Dissipation Operating Junction Temperature Storage Temperature Range
Symbol
Value
Unit
VDS
650
V
VGS
± 30
V
TC = 25℃
ID
11
A
TC = 100℃
ID
6.9
A
IDM
28
A
TC = 25℃
PD
83.3
W
Tj
150
℃
Tstg
- 55 to + 150
℃
Thermal Characteristics Parameter
Maximum Thermal Resistance from Juntion to Case Maximum Thermal Resistance from Juntion to Ambient
Symbol RθJC RθJA
Max. 1.5 62.
SFTN1165R Datasheet
